Gate Drivers and Control Circuitry of IGBTs and MOSFETs

Gate Drivers and control circuits are the interface between the signal level and the power stage within a power electronic system. They are responsible for a safe operation of the power switches.

The development of gate driving circuits for ideal operation of power electronics necessitates profound knowledge of semiconductor characteristics (MOSFETs, IGBTs), influence of gate voltage on switching behaviour, power supply of galvanically isolated parts of the circuitry, parasitics, and protection functions.

Beginning with silicon MOSFETs, switching behaviour will be explained, and then derived for Silicon Carbide MOSFETs and IGBTs. As the mechanisms are basically the same for all voltage/power classes, no differentiation will be done between high and low power devices.

In the context of the development and adoption of innovative Wide-Band-Gap semiconductors, new challenges concerning robust operation at very fast switching speed and frequencies are also addressed to attain the expected gains at system level.

With this tutorial we want to transfer the necessary knowledge to drive and control IGBTs and MOSFETs in a safe way. The focus is on modules, discretes will be covered only briefly.